دیتاشیت FCU900N60Z
مشخصات دیتاشیت
| نام دیتاشیت |
FCU900N60Z
|
| حجم فایل |
308.109
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCU900N60Z
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
DPAK-3
-
Manufacturer:
onsemi
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Series:
SuperFET® II
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
900mOhm @ 2.3A, 10V
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Vgs(th) (Max) @ Id:
3.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
52W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Stub Leads, IPak
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Base Part Number:
FCU900
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detail:
N-Channel 600V 4.5A (Tc) 52W (Tc) Through Hole I-PAK
